Open AccessCharacterization of GaN and InN Nucleation Layers by Reflection High Energy Electron Diffraction
Author(s) -
Hyunseok Na
Publication year - 2016
Publication title -
yeol'ceo'ri gonghag hoeji/yeol cheori gonghak hoeji
Language(s) - English
Resource type - Journals
eISSN - 2508-4046
pISSN - 1225-1070
DOI - 10.12656/jksht.2016.29.3.124
Subject(s) - reflection high energy electron diffraction , nucleation , wurtzite crystal structure , electron diffraction , materials science , molecular beam epitaxy , diffraction , annealing (glass) , sapphire , epitaxy , full width at half maximum , crystallography , layer (electronics) , optoelectronics , chemistry , optics , nanotechnology , physics , composite material , laser , organic chemistry