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Transient Dynamics and Directional Solidification in Space Platforms
Author(s) -
RUIZ X.
Publication year - 2006
Publication title -
annals of the new york academy of sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.712
H-Index - 248
eISSN - 1749-6632
pISSN - 0077-8923
DOI - 10.1196/annals.1362.010
Subject(s) - impulse (physics) , constant (computer programming) , mechanics , transient (computer programming) , thermal , flux (metallurgy) , semiconductor , pulse (music) , time constant , temperature gradient , dynamics (music) , growth velocity , materials science , physics , optics , classical mechanics , thermodynamics , acoustics , optoelectronics , biology , electrical engineering , quantum mechanics , endocrinology , detector , computer science , metallurgy , programming language , engineering , operating system
The impact of short impulsive forces on the semiconductor segregation patterns inside a generic μg Bridgman growth arrangement is discussed here with the help of a time‐dependent 2D numerical scheme. Impulses have been applied parallel to the growth interface, equivalently, orthogonal to the external thermal gradient. The present results indicate that for each one of the three semiconductors considered, the reduced longitudinal and radial solid segregation are practically insensitive to the pulse shape, rectangular or half‐sinusoidal. The reduced longitudinal segregation only depends on the growth velocity for constant g‐dose impulses. The reduced radial segregation depends on both the interface growth velocity and very weakly on the activity time of the constant g‐dose impulse externally applied. The thermal flux across the interface is shape‐dependent and does not act synchronically with half‐sinusoidal external impulses. Also, as before, this flux depends on the activity time and on the growth velocity for constant g‐dose impulses.