Open AccessThermal model developed of high electron mobility transistor AlGaN-GaN
Author(s) -
Azzeddine Farti,
Abdelkader Touhami
Publication year - 2022
Publication title -
indonesian journal of electrical engineering and computer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.241
H-Index - 17
eISSN - 2502-4760
pISSN - 2502-4752
DOI - 10.11591/ijeecs.v26.i2.pp689-698
Subject(s) - materials science , transistor , optoelectronics , saturation velocity , sapphire , saturation (graph theory) , velocity saturation , thermal , substrate (aquarium) , gallium nitride , thermal conductivity , dissipation , wide bandgap semiconductor , voltage , electrical engineering , nanotechnology , mosfet , composite material , thermodynamics , optics , engineering , physics , laser , oceanography , mathematics , combinatorics , geology , layer (electronics)
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