Open AccessConsideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film
Author(s) -
Yasuhisa Ōmura
Publication year - 2021
Publication title -
indonesian journal of electrical engineering and computer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.241
H-Index - 17
eISSN - 2502-4760
pISSN - 2502-4752
DOI - 10.11591/ijeecs.v24.i3.pp1367-1378
Subject(s) - materials science , silicon , sputtering , electron , optoelectronics , oxide , silicon oxide , hot carrier injection , sputter deposition , thermal conduction , stack (abstract data type) , voltage , nanotechnology , thin film , electrical engineering , composite material , metallurgy , physics , transistor , computer science , silicon nitride , engineering , quantum mechanics , programming language
This paper considers the contribution of hot electrons to the resistive switching of sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations. Using various device stack structures, this paper examines the impact of hot-electron injection on resistive switching, where conduction-band offset and fermi-level difference are utilized. Support is found for the predictions that hot-electron injection reduces the switching voltage and this should reduce the dissipation energy of switching. It is predicted that two-layer metal stacks can significantly reduce the number of oxygen vacancies in the sputter-deposited silicon oxide film after the reset process. It is also demonstrated that, in unipolar switching, the number of E’ or E” centers of the sputter-deposited silicon oxide film is relatively large.