Open AccessOptimization of 16 nm DG-FinFET using L25 orthogonal array of taguchi statistical method
Author(s) -
Ameer F. Roslan,
F. Salehuddin,
Anis Suhaila Mohd Zain,
K. E. Kaharudin,
Ibrahim Ahmad
Publication year - 2020
Publication title -
indonesian journal of electrical engineering and computer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.241
H-Index - 17
eISSN - 2502-4760
pISSN - 2502-4752
DOI - 10.11591/ijeecs.v18.i3.pp1207-1214
Subject(s) - doping , taguchi methods , materials science , electrical engineering , optoelectronics , tilt (camera) , process optimization , electronic engineering , analytical chemistry (journal) , engineering , chemistry , composite material , mechanical engineering , chromatography , environmental engineering
The impact of the optimization using Taguchi statistical method towards the electrical properties of a 16 nm double-gate FinFET (DG-FinFET) is investigated and analyzed. The inclusion of drive current (I ON ), leakage current (I OFF ), and threshold voltage (V TH ) as part of electrical properties presented in this paper will be determined by the amendment of six process parameters that comprises the polysilicon doping dose, polysilicon doping tilt, Source/Drain doping dose, Source/Drain doping tilt, V TH doping dose, V TH doping tilt, alongside the consideration of noise factor in gate oxidation temperature and polysilicon oxidation temperature. Silvaco TCAD software is utilized in this experiment with the employment of both ATHENA and ATLAS module to perform the respective device simulation and the electrical characterization of the device. The output responses obtained from the design is then succeeded by the implementation of Taguchi statistical method to facilitate the process parameter optimization as well as its design. The effectiveness of the process parameter is opted through the factor effect percentage on Signal-to-noise ratio with considerations towards I ON and I OFF . The most dominant factor procured is the polysilicon doping tilt. The I ON and I OFF obtained after the optimization are 1726.88 μA/μm and 503.41 pA/μm for which has met the predictions of International Technology Roadmap for Semiconductors (ITRS) 2013.