Open Access3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect
Author(s) -
Ameer F. Roslan,
F. Salehuddin,
Anis Suhaila Mohd Zain,
K. E. Kaharudin,
Hazura Haroon,
A. R. Hanim,
Siti Khadijah Idris,
B. Z. Zarina,
Afifah Maheran A.H
Publication year - 2018
Publication title -
indonesian journal of electrical engineering and computer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.241
H-Index - 17
eISSN - 2502-4760
pISSN - 2502-4752
DOI - 10.11591/ijeecs.v12.i3.pp1358-1365
Subject(s) - leakage (economics) , threshold voltage , fabrication , materials science , short channel effect , channel (broadcasting) , node (physics) , optoelectronics , voltage , ion , electrical engineering , technology roadmap , electronic engineering , mosfet , engineering , transistor , chemistry , medicine , alternative medicine , business , structural engineering , organic chemistry , pathology , marketing , economics , macroeconomics
This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.