Open AccessA MIMO H-shape Dielectric Resonator Antenna for 4G Applications
Author(s) -
S. Salihah,
Mohd Haizal Jamaluddin,
Raghuraman Selvaraju,
Muhammad Hafiz
Publication year - 2018
Publication title -
indonesian journal of electrical engineering and computer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.241
H-Index - 17
eISSN - 2502-4760
pISSN - 2502-4752
DOI - 10.11591/ijeecs.v10.i2.pp648-653
Subject(s) - return loss , dielectric resonator antenna , bandwidth (computing) , microstrip , antenna gain , resonator , microwave , port (circuit theory) , physics , electrical impedance , electrical engineering , microstrip antenna , optoelectronics , materials science , electronic engineering , acoustics , antenna (radio) , telecommunications , antenna factor , engineering
In this article, a Multiple-Input-Multiple-Output (MIMO) H-shape Dielectric Resonator Antenna (DRA) is designed and simulated at 2.6 GHz for 4G applications. The proposed structure consists of H-shape DRA ( =10) which is mounted on FR4 substrate ( =4.6), and feed by two different feeding mechanisms. First, microstrip with slot coupling as Port 1. Second, coaxial probe as Port 2. The electrical properties of the proposed MIMO H-shape DRA in term of return loss, bandwidth and gain are completely obtained by using CST Microwave Studio Suite Software. The simulated results demonstrated a return loss more than 20 dB, an impedance bandwidth of 26 % (2.2 – 2.9 GHz), and gain of 6.11 dBi at Port 1. Then, a return loss more than 20 dB, an impedance bandwidth of 13 % (2.2 – 2.7 GHz), and gain of 6.63 dBi at Port 2. Both ports indicated impedance bandwidth more than 10 %, return loss lower than 20 dB, and gain more than 10 dBi at 2.6 GHz. The simulated electrical properties of the proposed design show a good potential for LTE applications.