Open AccessModeling and simulation of graphene field effect transistor (GFET)
Author(s) -
B S Nanda,
P. S. Puttaswamy
Publication year - 2019
Publication title -
international journal of electrical and computer engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.277
H-Index - 22
ISSN - 2088-8708
DOI - 10.11591/ijece.v9i6.pp4826-4835
Subject(s) - span (engineering) , graphene , transistor , fabrication , field effect transistor , process (computing) , simulation software , field (mathematics) , computer science , software , optoelectronics , materials science , electrical engineering , nanotechnology , engineering , operating system , voltage , structural engineering , medicine , alternative medicine , mathematics , pathology , pure mathematics
Graphene based top-gated Field effect transistor (GFET) is designed and simulated using the device simulator packages. The paper describes fabrication process and the device simulation aspects of the GFET device. Two devices with different gate lengths of 200nm and 350nm are simulated. Device simulations are carried out in open source TCAD software package. The results indicate a depletion FET type operation in which ON/OFF current ratio of 2.25 is obtained.