Open AccessEffect of Chirality and Oxide Thikness on the Performance of a Ballistic CNTFET
Author(s) -
Asma Laribi,
A. Guen Bouazza
Publication year - 2018
Publication title -
international journal of electrical and computer engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.277
H-Index - 22
ISSN - 2088-8708
DOI - 10.11591/ijece.v8i6.pp4941-4950
Subject(s) - carbon nanotube field effect transistor , nanoelectronics , carbon nanotube , oxide , materials science , chirality (physics) , nanotechnology , gate oxide , transistor , nanotube , field effect transistor , optoelectronics , physics , voltage , quantum mechanics , chiral symmetry breaking , quark , nambu–jona lasinio model , metallurgy
Since the discovery of 1D nano-object, they are constantly revealing significant physical properties. In this regard, carbon nanotube (CNT) is considered as a promising candidate for application in future nanoelectronics devices like carbon nanotube field effect transistor (CNTFET). In this work, the impact of chirality and gate oxide thikness on the electrical characteristics of a CNTFET are studied. The chiralities used are (5, 0), (10, 0), (19, 0), (26, 0), and the gate oxide thikness varied from 1 to 5 nm.This work is based on a numerical simulation program based on surface potential model. CNTFET Modeling is useful for semiconductor industries for nano scale devices manufacturing. From our results we have observed that the output current increases with chirality increasing.We have also highlight the importance of the gate oxide thickness on the drain current that increases when gate oxide is thin.