Open Access0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design
Author(s) -
Shiva Ghandi Isma Ilamaran,
Zubaida Yusoff,
Jahariah Sampe
Publication year - 2018
Publication title -
international journal of electrical and computer engineering (ijece)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.277
H-Index - 22
ISSN - 2088-8708
DOI - 10.11591/ijece.v8i3.pp1837-1843
Subject(s) - amplifier , rf power amplifier , radio frequency , high electron mobility transistor , wideband , electrical engineering , power added efficiency , bandwidth (computing) , materials science , load pull , gallium nitride , electronic engineering , computer science , optoelectronics , transistor , telecommunications , engineering , voltage , layer (electronics) , composite material
With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom