Open AccessOptimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier
Author(s) -
Warsuzarina Mat Jubadi,
Fauzi Packeer,
M. Missous
Publication year - 2017
Publication title -
international journal of electrical and computer engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.277
H-Index - 22
ISSN - 2088-8708
DOI - 10.11591/ijece.v7i6.pp3002-3009
Subject(s) - high electron mobility transistor , amplifier , materials science , transistor , low noise amplifier , monolithic microwave integrated circuit , optoelectronics , noise (video) , signal (programming language) , electronic engineering , electrical engineering , computer science , engineering , cmos , voltage , artificial intelligence , image (mathematics) , programming language
An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.