Open AccessModelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor
Author(s) -
Yamina Berrichi,
K. Ghaffour
Publication year - 2015
Publication title -
international journal of electrical and computer engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.277
H-Index - 22
ISSN - 2088-8708
DOI - 10.11591/ijece.v5i3.pp525-530
Subject(s) - heterojunction , bipolar junction transistor , band diagram , conduction band , materials science , optoelectronics , heterojunction bipolar transistor , diagram , heterostructure emitter bipolar transistor , transistor , electrical engineering , computer science , physics , voltage , electron , engineering , quantum mechanics , database
In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, I C- V C characteristic and conduction bands for different values of V BE . The simulation of this structure has demonstrated the validity of our model and the method of the simulation.