Open AccessDesign and implementation of silicon single-photon avalanche photodiode modeling tool for QKD systems
Author(s) -
Adil Fadhil Mushatet,
Ahmed I. Khaleel,
Shelan K. Tawfeeq
Publication year - 2021
Publication title -
international journal of power electronics and drive systems/international journal of electrical and computer engineering
Language(s) - English
Resource type - Journals
eISSN - 2722-2578
pISSN - 2722-256X
DOI - 10.11591/ijece.v11i5.pp3870-3881
Subject(s) - avalanche photodiode , quantum key distribution , avalanche diode , detector , photon , photon counting , computer science , single photon avalanche diode , silicon photomultiplier , optics , process (computing) , quantum efficiency , physics , optoelectronics , voltage , breakdown voltage , scintillator , quantum mechanics , operating system
Single-photon detection concept is the most crucial factor that determines the performance of quantum key distribution (QKD) systems. In this paper, a simulator with time domain visualizers and configurable parameters using continuous time simulation approach is presented for modeling and investigating the performance of single-photon detectors operating in Gieger mode at the wavelength of 830 nm. The widely used C30921S silicon avalanche photodiode was modeled in terms of avalanche pulse, the effect of experiment conditions such as excess voltage, temperature and average photon number on the photon detection efficiency, dark count rate and afterpulse probability. This work shows a general repeatable modeling process for significant performance evaluation. The most remarkable result emerged from the simulated data generated and detected by commercial devices is that the modeling process provides guidance for single-photon detectors design and characterization. The validation and testing results of the single-photon avalanche detectors (SPAD) simulator showed acceptable results with the theoretical and experimental results reported in related references and the device's data sheets.