Open AccessAn Algebraic Model for the Recombination Rate in Semiconductors
Author(s) -
M. A. Grado Caffaro,
M. Grado Caffaro
Publication year - 1993
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1993/68260
Subject(s) - semiconductor , formalism (music) , algebraic number , semiconductor materials , point (geometry) , electron , statistical physics , theoretical physics , physics , algebra over a field , mathematics , quantum mechanics , pure mathematics , mathematical analysis , geometry , art , musical , visual arts
This paper consists of a new formalism in order to interpret the electron-hole recombination rate insemiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introducedin a unique way. The methodology introduced here represents an interesting tool to evaluatecertain properties of semiconductors from a theoretical point of view