An Algebraic Model for the Recombination Rate in Semiconductors | Zendy

M. A. Grado Caffaro | Zendy; M. Grado Caffaro | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

An Algebraic Model for the Recombination Rate in Semiconductors

Author(s) -

M. A. Grado Caffaro,

M. Grado Caffaro

Publication year - 1992

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/1993/68260

Subject(s) - semiconductor , algebraic number , recombination , statistical physics , materials science , physics , mathematics , computer science , chemistry , optoelectronics , mathematical analysis , biochemistry , gene

This paper consists of a new formalism in order to interpret the electron-hole recombination rate insemiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introducedin a unique way. The methodology introduced here represents an interesting tool to evaluatecertain properties of semiconductors from a theoretical point of view

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research