Open AccessWork Function Extraction of Indium Tin Oxide Used As Transparent Gate Electrode for Mosfet
Author(s) -
Shraddha Dhanraj Nehate,
Kalpathy B. Sundaram
Publication year - 2017
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2017-01/43/1969
Subject(s) - work function , materials science , optoelectronics , indium tin oxide , mosfet , metal gate , electrode , gate oxide , transistor , nanotechnology , electrical engineering , voltage , thin film , layer (electronics) , chemistry , engineering
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