Open AccessEpitaxial Growth of Ge Strain Relaxed Buffer on Si with Low Threading Dislocation Density
Author(s) -
Ahmad Abedin,
Ali Asadollahi,
Konstantinos Garidis,
PerErik Hellström,
Mikael Östling
Publication year - 2016
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2016-02/30/1973
Subject(s) - materials science , chemical vapor deposition , epitaxy , electron mobility , optoelectronics , annealing (glass) , dislocation , germanium , wafer , dopant , torr , crystallography , silicon , doping , nanotechnology , layer (electronics) , composite material , chemistry , physics , thermodynamics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom