Open AccessTantalum Oxide Resistive Memory Devices By Ion Assisted Deposition
Author(s) -
Ronald S. Goeke,
David Russell Hughart,
Robin Jacobs-Gedrim,
Carl L. Smith,
Conrad D. James,
Matthew Marinella
Publication year - 2016
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2016-02/16/1471
Subject(s) - materials science , thin film , tantalum , resistive random access memory , sputtering , atomic layer deposition , ion beam assisted deposition , oxide , nanotechnology , tantalum pentoxide , optoelectronics , evaporation , vanadium oxide , argon , ion beam , ion , metallurgy , electrode , chemistry , physics , organic chemistry , thermodynamics
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