Open AccessEnhanced Ga2O3-Based RRAM via Stacked Bilayer ZnO/Ga2O3
Author(s) -
Chih-Yung Wang,
Sheng-Po Chang,
Wei-Lun Huang
Publication year - 2022
Publication title -
ecs advances
Language(s) - Uncategorized
Resource type - Journals
ISSN - 2754-2734
DOI - 10.1149/2754-2734/ac79bf
Subject(s) - resistive random access memory , materials science , oxygen , reset (finance) , bilayer , optoelectronics , electrode , limiting oxygen concentration , sputtering , voltage , layer (electronics) , analytical chemistry (journal) , nanotechnology , thin film , chemistry , electrical engineering , biochemistry , engineering , chromatography , membrane , financial economics , economics , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom