Open AccessComparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics
Author(s) -
Yoshihiro Irokawa,
Mari Inoue,
Toshihide Nabatame,
Yasuo Koide
Publication year - 2022
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac8a70
Subject(s) - materials science , dielectric , hydrogen , capacitor , oxide , analytical chemistry (journal) , metal , gate dielectric , semiconductor , capacitance , optoelectronics , voltage , electrical engineering , electrode , chemistry , transistor , metallurgy , organic chemistry , chromatography , engineering
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