Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics | Zendy

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Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al₂O₃, HfO₂, or Hf_0.57Si_0.43O_x Gate Dielectrics

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