Open AccessLowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor
Author(s) -
Yuika Takizawa,
Masataka Hayashi,
Hitoshi Habuka,
Akio Ishiguro,
Shigeaki Ishii,
T. Watanabe,
Yohsuke Moriyama,
Yoshiaki Daigo,
Ichiro Mizushima,
Yoshinao Takahashi
Publication year - 2022
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac889d
Subject(s) - materials science , chemical vapor deposition , silicon carbide , chlorine , pyrolytic carbon , polycrystalline silicon , nitrogen , chemical engineering , partial pressure , oxygen , inorganic chemistry , pyrolysis , composite material , chemistry , metallurgy , nanotechnology , organic chemistry , layer (electronics) , engineering , thin film transistor