Open AccessEffect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
Author(s) -
Zeyu Chen,
Yafei Liu,
Hongyu Peng,
Qianyu Cheng,
Shanshan Hu,
Balaji Raghothamachar,
Michael Dudley,
Reza Ghandi,
Stacey Kennerly,
P. Thieberger
Publication year - 2022
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac7351
Subject(s) - materials science , annealing (glass) , dopant , wafer , diode , ion implantation , pin diode , fluence , optoelectronics , analytical chemistry (journal) , ion , composite material , doping , chemistry , organic chemistry , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom