Open AccessOptimization of Finite-Zone Implanted Edge Termination for β-Ga2O3 SBD
Author(s) -
Boyi Wang,
Chun Feng,
Lijuan Jiang,
Huahua Xiao,
Wei Li,
Xiaoliang Wang
Publication year - 2022
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac7000
Subject(s) - materials science , breakdown voltage , trench , enhanced data rates for gsm evolution , ion implantation , voltage , acceptor , analytical chemistry (journal) , optoelectronics , ion , electrical engineering , composite material , condensed matter physics , chemistry , physics , layer (electronics) , telecommunications , organic chemistry , chromatography , computer science , engineering
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