Characterization of Continuous-Wave Laser Crystallized Silicon Thin Films with Hole-Patterns | Zendy

Thi Thuy Huong Nguyen | Zendy; Shin-Ichiro Kuroki | Zendy

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Characterization of Continuous-Wave Laser Crystallized Silicon Thin Films with Hole-Patterns

Author(s) -

Thi Thuy Huong Nguyen,

Shin-Ichiro Kuroki

Publication year - 2022

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2162-8777/ac689b

Subject(s) - materials science , thin film transistor , thin film , void (composites) , optoelectronics , polycrystalline silicon , silicon , substrate (aquarium) , characterization (materials science) , crystallite , composite material , nanotechnology , metallurgy , layer (electronics) , oceanography , geology

Single crystal grain low-temperature polycrystalline thin-film transistors (LTPS-TFTs) fabricated on a glass substrate have been the key target for developing transparent electronics such as monolithic three-dimensional integrated circuits (3DICs) and glass sheet computers because of their ultrahigh-performance. This study proposes a simple method to pre-define single-crystal grains with hole-patterned polycrystalline silicon (poly-Si) thin film. The crystal growth and the temperature distribution were clarified by observing the characterization of a hole-patterned poly-Si thin film. The relationship between the temperature gradient, crystal growth, and void formation in the poly-Si thin film is discussed. The location of voids is controllable in the hole-patterned poly-Si thin film. These pre-defined single-crystal grains are promising to fabricate ultrahigh-performance LTPS-TFTs.

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