Open AccessNegative Series Resistance (Rs) and Real Part of Impedance (Z′), and Positive and Negative Imaginary Part of Impedance (Z″) at a High Frequency of Au/CNTS/n-Si/Al Structure
Author(s) -
A. Ashery,
S. A. Gad,
Gamal Turky
Publication year - 2022
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac689a
Subject(s) - materials science , electrical impedance , diode , negative resistance , equivalent series resistance , quantum tunnelling , condensed matter physics , frequency dependence , atomic physics , analytical chemistry (journal) , voltage , physics , nuclear magnetic resonance , optoelectronics , chemistry , quantum mechanics , chromatography
We present negative values for series resistance (Rs), the negative real part of impedance (Z'), showing that the positive and negative values of the imaginary part of impedance (Z'') seemed at high frequency for all voltages, temperatures, and frequencies of Au/CNTS/n-Si/Al. At all frequencies the Rs has positive values, increasing with decreasing frequencies except at 2 x 107Hz, where Rs has negative values of about -5200Ω. At f = 2 x 107Hz, Z' has negative values, reaching - 0.5 Ω, and at other frequencies the Z' has positive values, showing growth with decreasing frequency. The Z'' has positive values at frequencies of 2x 107,1 x 107,1 x 103,1 x 102 Hz, while at frequencies of 1 x 106,1 x 105,1 x 104) Hz the Z'' has negative values. At high frequencies, the assembly Au/CNTS/n-Si/Al behaves as a tunneling diode with negative resistance. At other frequencies this structure Au/CNTS/n-Si/Al behaves as a normal diode, and negative resistance disappears. This structure Au/CNTS/n-Si/Al is applied as tunneling diode at high frequency and a normal diode by changing frequencies. The electrical properties and conduction mechanism of this structure were investigated.