Perspective—Demystifying the Power Withstanding Capabilities of CNT Bundle Interconnects

This article discusses the power consumption trends of two geometries of CNT bundle interconnects for VLSI applications. The electrostatic and electro-thermal field simulations of square and triangular CNT bundle interconnects are done. Two factors viz. power dissipated and peak temperature are extracted and a new figure of merit called power temperature product (PTP) is defined. The PTP is calculated for interconnect lengths ranging from 500 μ m to 2000 μ m. Results show that both triangular as well as square CNT bundles have high power withstanding capacity. Triangular CNT bundles have higher PTP when the associate phase changes are ignored.