Open AccessFabrication and Ions Irradiation Study of AlN:Gd Thin Films
Author(s) -
Asmat Ullah,
Muhammad Usman,
Ahmer Hussain Shah,
Iftikhar Ahmad,
Muhammad Maqbool
Publication year - 2022
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac6116
Subject(s) - materials science , thin film , irradiation , rutherford backscattering spectrometry , spectroscopy , fluence , fourier transform infrared spectroscopy , analytical chemistry (journal) , stopping power , sputter deposition , ion , sputtering , optoelectronics , optics , nanotechnology , chemistry , physics , chromatography , quantum mechanics , nuclear physics , organic chemistry
Thin films of Aluminum Nitride (AlN) doped with Gadolinium (Gd) are deposited on Si (111) substrates, in pure Nitrogen (N) atmosphere using reactive magnetron sputtering technique at room temperature. The as-deposited thin films are irradiated by protons carrying 335 keV energy with a fluence of 1 × 10 14 ions cm −2 . Rutherford Backscattering Spectroscopy (RBS) is carried out using a 2 MeV He ++ beam to understand the stoichiometric and dimensional features of the films. Modifications in the structural, electronic, optical, and electrical properties are investigated prior to and after the irradiation using X-ray diffraction (XRD), Fourier transforms, infrared spectroscopy (FTIR), diffuse reflectance spectroscopy (DRS), and four-probe point method. Stopping power and range of ions in matters (SRIM) is used to study the non-ionizing energy loss (NIEL) and Frenkel defect density/vacancies in AlN, caused by irradiation. Proton irradiation-induced changes in the structure and enhancement in the optical and electrical characteristics of the films make AlN:Gd a good candidate for advanced electronics and optical technology.