Open Access(100) Plane β-Ga2O3 Flake Based Field Effect Transistor and Its Hydrogen Response
Author(s) -
Man-Kyung Kim,
YuKyung Kim,
Jinho Bae,
Jihyun Kim,
Kwang Hyeon Baik,
Soohwan Jang
Publication year - 2021
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac451b
Subject(s) - materials science , transconductance , analytical chemistry (journal) , responsivity , etching (microfabrication) , transistor , optoelectronics , nanotechnology , voltage , layer (electronics) , electrical engineering , chemistry , chromatography , photodetector , engineering
2-dimensional (100) plane β phase Ga 2 O 3 ( β -Ga 2 O 3 ) flake based field effect transistor (FET) was fabricated, and its electrical characteristics was analyzed. The (100) plane β -Ga 2 O 3 flake was mechanically exfoliated from the side wall of 2 ¯ 01 plane β -Ga 2 O 3 bulk substrate. The minimum thickness of 57.3 nm was obtained for the very thin (100) plane β -Ga 2 O 3 channel layer of the FET using inductively coupled plasma etching with BCl 3 /N 2 chemistry. The current-voltage characteristics of the FET with various β -Ga 2 O 3 channel thickness was investigated. The dependence of the channel thickness on the drain current density, threshold voltage, transconductance, and field effect mobility was studied. The hydrogen response of the (100) plane Ga 2 O 3 flake based FET with catalytic Pt gate surface was measured in the range of 10–500 ppm at 400 °C, and modeled with a dissociative Langmuir isotherm. The device showed a reliable responsivity to the different concentration of hydrogen exposure, and the responsivity of 25.02% was observed for the 500 ppm hydrogen at 400 °C.