Open AccessEnhancing Breakdown Voltage of a Ga2O3 Schottky Barrier Diode with Small-Angle Beveled and High-k Oxide Field Plate
Author(s) -
Dinghe Liu,
YuWen Huang,
Zeyulin Zhang,
Dazheng Chen,
Qian Feng,
Hailong You,
Jincheng Zhang,
Chunfu Zhang,
Yue Hao
Publication year - 2021
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac3afd
Subject(s) - breakdown voltage , materials science , bevel , schottky barrier , dielectric strength , dielectric , schottky diode , diode , avalanche diode , optoelectronics , voltage , electrical engineering , structural engineering , engineering
To increase their breakdown voltage, Ga 2 O 3 Schottky barrier diodes (SBDs) with a beveled field plate were designed based on TCAD platform simulations. The small-angle beveled field plate can effectively alleviate the electric field concentration effect. The breakdown voltage of Ga 2 O 3 SBDs can reach 1217 V with the SiO 2 dielectric and a small-angle (1°) beveled field plate. However, the breakdown mechanism is the early breakdown of the dielectric layer. TO further increase the breakdown voltage, the replacement of SiO 2 with a high-k dielectric (Al 2 O 3 and HfO 2 ) can transfer the breakdown location into the Ga 2 O 3 drift layer. By combining the beveled small-angle design and the high-k dielectric, the device demonstrates a Baliga’s figure of merit of 2.94 GW cm −2 and breakdown voltage of 3108 V.