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Reactive-Vacancy Mechanism of Pore Growth in Oxide Films
Author(s) -
V. S. Ovchinnikov
Publication year - 2021
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac2916
Subject(s) - vacancy defect , crystallographic defect , materials science , stoichiometry , chemical physics , ion , oxide , chemical reaction , crystallography , chemistry , metallurgy , biochemistry , organic chemistry

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