A Sensitivity Controllable Thermopile Infrared Sensor by Monolithic Integration of a N-channel Metal Oxide Semiconductor | Zendy

Hongbo Li | Zendy; Gaobo Xu | Zendy; Chenchen Zhang | Zendy; Haiyang Mao | Zendy; Na Zhou | Zendy; Dapeng Chen | Zendy

Open Access

A Sensitivity Controllable Thermopile Infrared Sensor by Monolithic Integration of a N-channel Metal Oxide Semiconductor

Author(s) -

Hongbo Li,

Gaobo Xu,

Chenchen Zhang,

Haiyang Mao,

Na Zhou,

Dapeng Chen

Publication year - 2021

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2162-8777/ac26d6

Subject(s) - thermopile , nmos logic , materials science , optoelectronics , cmos , sensitivity (control systems) , fabrication , infrared , voltage , electronic engineering , electrical engineering , transistor , optics , engineering , physics , medicine , alternative medicine , pathology

We report a sensitivity controllable infrared (IR) sensor composed of a thermopile and a n-channel metal oxide semiconductor (NMOS). In the sensor, the cathode of the thermopile is connected with the gate of NMOS. Such a sensor is fabricated by using a CMOS-compatible monolithic integration process. Compared with the separate thermopile IR sensor, sensitivity of the thermopile IR sensor integrated with NMOS can be remarkably enhanced by 357%. In addition, the drain bias voltage of the NMOS can be employed as a quick-response switch. The fabrication process of this device is quite simple and compatible with CMOS processes, thus such a thermopile IR sensor integrated with NMOS is low-cost and suitable for mass production. Moreover, the integration approach can be further applied to develop thermopile arrays for high-resolution imaging.

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