Open AccessCommunication—Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide
Author(s) -
Markus Leitgeb,
Georg Pfusterschmied,
Sabine Schwarz,
Ben Depuydt,
Jinyoun Cho,
U. Schmid
Publication year - 2021
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ac10b3
Subject(s) - monocrystalline silicon , materials science , etching (microfabrication) , silicon carbide , optoelectronics , current (fluid) , silicon , carbide , modulation (music) , nanotechnology , optics , composite material , electrical engineering , philosophy , engineering , layer (electronics) , aesthetics , physics
Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The period length of the pore diameter variation could be estimated to be about 20 nm. Additionally, it was observed that the assembly of the pores in a top down view is a Turing pattern.