Open AccessWet Etching Behavior of Amorphous CuZr Thin Film in Hydrogen Peroxide Solution for Stretchable Display
Author(s) -
Jin-Won Bae,
Myeong-Joon Kim,
Jong-Hyun Seo
Publication year - 2021
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/abffac
Subject(s) - materials science , amorphous solid , copper , hydrogen peroxide , etching (microfabrication) , fluoride , dissolution , chemical engineering , electrochemistry , thin film , isotropic etching , tafel equation , composite material , metallurgy , nanotechnology , inorganic chemistry , electrode , crystallography , chemistry , organic chemistry , layer (electronics) , engineering
Stretchable displays, a key benchmark for the next generation of display technologies, will be bendable, foldable, flexible and use a stretchable copper film. Amorphous CuZr has been selected for the copper metallization of the stretchable display due to its excellent elongation properties compared to conventional metals. However, little is known about the etching mechanism for amorphous CuZr and copper in a hydrogen peroxide solution containing fluorine ions. In this paper, the wet etching behavior of amorphous Cu 50 Zr 50 thin films in a hydrogen peroxide-based copper wet etchant is studied using an electrochemical potentio-dynamic technique and surface analysis. An anodic Tafel slope of approximately 30 mV/decade is obtained. A new dissolution mechanism in the presence of 0.1 M fluoride ions in hydrogen peroxide solution is suggested. It should be noted that the wet etching rate of amorphous CuZr is strongly dependent on the existence of fluoride ions in the wet etchant.