Open AccessMOVPE Growth and EQE Artifact Analysis of Upright Metamorphic Quadruple Junction Solar Cell
Author(s) -
Qiming Zhang,
Baoguo Zhang,
Hongliang Guo,
Y.T. Tang,
Yanmei Wu,
Rubin Liu,
Heng Zhang,
Liyong Yao,
Qiang Sun
Publication year - 2021
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/abe2ed
Subject(s) - materials science , cathodoluminescence , metalorganic vapour phase epitaxy , metamorphic rock , epitaxy , solar cell , optoelectronics , luminescence , analytical chemistry (journal) , layer (electronics) , nanotechnology , chemistry , geochemistry , chromatography , geology
The performance of metal-organic vapor phase epitaxy (MOVPE) grown upright metamorphic (UMM) AlGaInP/AlGaInAs/GaInAs/Ge quadruple junction (QJ) solar cells have been investigated. Metamorphic (MM) epitaxy is achieved through compositionally graded buffer (CGB) layer varying in lattice constants between Ge and Ga 0.8 In 0.2 As. High-resolution X-ray diffraction (HRXRD) was used to study the relaxation of strain which is about 98%. Threading dislocation density (TDD) at about 3 × 10 5 cm −2 was estimated from cathodoluminescence (CL) images. Incorporation of oxygen is effectively suppressed by elevated growth temperature and phosphine flow, which can decrease the nonradiative recombination rate in active layers. Systematic spectra response measurements were used to analyze the comprehensive effect of reverse breakdown (RBD) and luminescence coupling (LC) in multijunction solar cells, including bias light- and voltage-modulated analysis and corresponding analytical models.