Open AccessTrap Density Assessment on Multilayer WS2 using Power-Dependent Indirect Photoluminescence
Author(s) -
Alessandra Leonhardt,
Thomas Nuytten,
César J. Lockhart de la Rosa,
Stefanie Sergeant,
Vivek Mootheri,
Cedric Huyghebaert,
Stefan De Gendt
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/abc3d0
Subject(s) - photoluminescence , materials science , trap (plumbing) , optoelectronics , exciton , spontaneous emission , auger effect , recombination , modulation (music) , atomic physics , auger , optics , condensed matter physics , physics , laser , chemistry , biochemistry , meteorology , acoustics , gene
Material or interface defectivity assessment of 2D materials remains a challenge, specifically in terms of simple techniques which can be integrated in a CMOS process line. Here we demonstrate an optical technique that assesses interface trap densities, based on the indirect photoluminescence emission. We achieved that by demonstrating the modulation of the indirect/direct photoluminescence peak intensity ratio by the exciton concentration and then linking the modulation to the trap-sensitive non-radiative Auger recombination. Calibration is achieved through theoretical modeling of the recombination mechanisms and, as an example of the methodology, a trap density between 1.6 × 10 10 cm −2 and 1.2 × 10 11 cm −2 is extracted from (hBN/)WS 2 /SiO 2 structures.