Open AccessInteraction Behaviour of Nanostructured In2O3 Thin Film Towards Nitric Oxide in Argon
Author(s) -
E. Prabhu,
R. Asuvathraman,
Amarnath Murthy,
V. Jayaraman,
K. I. Gnanasekar
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/aba911
Subject(s) - argon , materials science , analytical chemistry (journal) , adsorption , oxygen , thin film , oxide , atomic physics , nanotechnology , chemistry , physics , metallurgy , organic chemistry , chromatography
“In-situ changes in the carrier concentrations of In 2 O 3 thin film were measured as a function of temperature in argon and argon containing 25 ppm of NO using high temperature Hall measurement facility. Studies show that the charge carrier concentration of In 2 O 3 in argon at 373 K is 5.4 × 10 17 cm −3 which gets reduced to 1.5 × 10 15 cm −3 in oxygen due to the strong electron withdrawing character of the adsorbed oxygen. 25 ppm of NO in argon drastically lowers the carrier concentration of In 2 O 3 to 4.8 × 10 16 cm −3 at 573 K from 6.1 × 10 17 due to its higher electron withdrawing character. “The change in DC conductance during sensing is caused by the adsorption of NO in argon on In 2 O 3 surface which is confirmed by the analysis of N 1s pattern.” Adsorption of NO increases charge depletion length (L D ) for NO in argon to 25.9 nm at 573 K from its value of 2.3 nm for pure argon and the temperature dependence of L D for NO in argon is evaluated.”