Open AccessReview—Recent Advances in Designing Gallium Oxide MOSFET for RF Application
Author(s) -
Narendra Yadava,
R. K. Chauhan
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/aba729
Subject(s) - materials science , mosfet , power mosfet , optoelectronics , radio frequency , engineering physics , power semiconductor device , band gap , gallium , rf power amplifier , electrical engineering , saturation velocity , electronic engineering , transistor , voltage , engineering , cmos , amplifier , metallurgy
The large bandgap (∼4.8 eV), high critical field strength (∼8 MV cm −1 ) and high saturation velocity (∼2e7 cm s −1 ) are the key enabling material parameters of gallium oxide (GO) which allows it for designing high power radio frequency (RF) MOSFET. In MOS device-based applications, these material parameters combined with large area native substrates and ion-implantation technology results in exceptionally low ON-state power losses, high-speed power, RF switching, and more stable high-temperature operation. This paper comprehensively focuses on reviewing the latest progress of ultra-wide bandgap GO MOSFET for RF application. The performance of GO MOS devices is fully discussed and compared. Finally, potential solutions to the challenges of GO-based MOSFET for RF applications are also discussed and explored.