Open AccessA Metal-Oxide Contact to ε-Ga2O3 Epitaxial Films and Relevant Conduction Mechanism
Author(s) -
A. Bosio,
Carmine Borelli,
A. Parisini,
M. Pavesi,
Salvatore Vantaggio,
R. Fornari
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ab8f37
Subject(s) - ohmic contact , materials science , oxide , thermal conduction , epitaxy , metal , optoelectronics , gallium oxide , gallium , nanotechnology , metallurgy , composite material , layer (electronics)
In this work, the conduction mechanisms across novel contacts to epitaxial films of pure phase epsilon-Ga 2 O 3 ( ε -Ga 2 O 3 ) were investigated. Different structures made by sputtered metal and oxide thin films were tested as electrical contacts. I-V characteristics show heterogeneous behaviors, revealing different conduction mechanisms according to the applied bias. The results are interesting as they offer a viable method to obtain ohmic contacts on ε -Ga 2 O 3 , which is less studied than other gallium oxide polymorphs but may find application in new electronic and optoelectronic devices. The newly developed ohmic contacts allow to fabricate simple test devices and assess the potential of this material.