English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

This paper benchmarks various epitaxial growth schemes based on  n -type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 × 10 20  cm −3  and a contact resistivity down to 7.5 × 10 −9  Ω.cm 2 . However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within the material stacks assessed, one option for Ge nMOS source/drain stressors would be to stack Si:P, deposited at contact level, on top of a selectively grown  n -Si y Ge 1− x − y Sn x at source/drain level, in line with the concept of Si passivation of  n -Ge surfaces to achieve low contact resistivities as reported in literature (Martens et al. 2011  Appl. Phys. Lett. ,  98 , 013 504). The saturation in active carrier concentration with increasing P (or As)-doping is the major bottleneck in achieving low contact resistivities for as-grown Ge or Si y Ge 1− x − y Sn x . We focus on understanding various dopant deactivation mechanisms in P-doped Ge and Ge 1− x Sn x alloys. First principles simulation results suggest that P deactivation in Ge and Ge 1− x Sn x can be explained both by P-clustering and donor-vacancy complexes. Positron annihilation spectroscopy analysis, suggests that dopant deactivation in P-doped Ge and Ge 1− x Sn x is primarily due to the formation of P n -V and Sn m P n -V clusters.

ecs journal of solid state science and technology

Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx