Open AccessHVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates
Author(s) -
В. И. Николаев,
С. И. Степанов,
A. I. Pechnikov,
Sevastian Shapenkov,
M. P. Scheglov,
A. V. Chikiryaka,
O. F. Vyvenko
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ab8b4c
Subject(s) - materials science , cathodoluminescence , epitaxy , gallium , analytical chemistry (journal) , oxide , sapphire , crystallography , luminescence , optoelectronics , nanotechnology , optics , metallurgy , laser , layer (electronics) , chemistry , chromatography , physics
In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 °C–600 °C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and 2 ¯ 01 bulk β -Ga 2 O 3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga 2 O 3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga 2 O 3 :Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.