Open AccessPreparation of High Al Content (AlxGa1−x)2O3 Films by Low-Pressure Reactive Vapor Deposition on Sapphire Substrates
Author(s) -
Jianjun Shi,
Hongwei Liang,
Xiaochuan Xia,
Long Ze,
Heqiu Zhang,
Yang Liu,
Xiaoli Dong,
Zhitai Jia
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ab89b7
Subject(s) - materials science , analytical chemistry (journal) , x ray photoelectron spectroscopy , full width at half maximum , scanning electron microscope , sapphire , thin film , crystallography , optics , nanotechnology , chemistry , laser , nuclear magnetic resonance , composite material , optoelectronics , physics , chromatography
Beta-(Al x Ga 1−x ) 2 O 3 thin films were prepared on c-plane sapphire substrates by low-pressure reactive vapor deposition at different temperature. The crystal structure, surface morphology, and optical properties of β -(Al x Ga 1−x ) 2 O 3 films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), and transmission spectra. The β -(Al x Ga 1−x ) 2 O 3 films were preferred [ 2 ¯ 01] orientation. The film grown at 1400 °C has narrower full width half maximum (FWHM) than grown at 1450 °C. As the growth temperature increases, the Al group decreases. The Al content of β -(Al x Ga 1−x ) 2 O 3 films grown at 1400 °C and 1450 °C are x = 0.524 and x = 0.489, respectively. The SEM and AFM images showed different growth mode for β -(Al x Ga 1−x ) 2 O 3 films grown at 1400 °C and 1450 °C and their root-mean-square roughness (RMS) values are 5.27 nm and 5.33 nm, respectively. All the prepared β -(Al x Ga 1−x ) 2 O 3 films have high transmittances exceeding 90% in visible region and large optical bandgap above 6 eV. These results indicate that low-pressure reactive vapor deposition technology is a promising growth technology for a high quality β -(AlGa) 2 O 3 films with tunable properties.