Open AccessControlling the Cerium Oxidation State During Silicon Oxide CMP to Improve Material Removal Rate and Roughness
Author(s) -
Christopher Netzband,
Kathleen Dunn
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ab8393
Subject(s) - materials science , slurry , chemical mechanical planarization , cerium oxide , surface roughness , polishing , oxide , surface finish , chemical engineering , silicon , thermal oxidation , hydrogen peroxide , particle size , particle (ecology) , metallurgy , composite material , organic chemistry , chemistry , engineering , oceanography , geology
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