Study on the Performance of Superlattice-Like Thin Film V2O5/Sb in Phase Change Memory | Zendy

Yongkang Xu | Zendy; Yifeng Hu | Zendy; Song Sun | Zendy; Xiaoqin Zhu | Zendy; Tianshu Lai | Zendy; Sannian Song | Zendy; Zhitang Song | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Study on the Performance of Superlattice-Like Thin Film V₂O₅/Sb in Phase Change Memory

Author(s) -

Yongkang Xu,

Yifeng Hu,

Song Sun,

Xiaoqin Zhu,

Tianshu Lai,

Sannian Song,

Zhitang Song

Publication year - 2020

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2162-8777/ab7885

Subject(s) - materials science , superlattice , thin film , raman spectroscopy , phase change memory , transmission electron microscopy , phase (matter) , crystallization , thermal stability , analytical chemistry (journal) , crystallography , optoelectronics , optics , nanotechnology , chemical engineering , layer (electronics) , chemistry , physics , organic chemistry , engineering , chromatography

Compared with Sb film, V 2 O 5 /Sb superlattice-like thin film has better thermal stability ( T c ∼ 240 °C, T 10-year ∼ 172.9 °C). V 2 O 5 /Sb thin film is suppressed by the multiple interfaces and the grains become smaller. The vibrational peaks of Sb-Sb and V–O bonds are observed by Raman measurement. The interaction between the two crystal systems improves the stability of the V 2 O 5 /Sb membrane. The multilayer structures before and after crystallization were observed by transmission electron microscopy. The ultralow-power (2.25 × 10 −12 J) and ultrafast-speed (8 ns) has been achieved for V 2 O 5 (1 nm)/Sb(9 nm)-based phase change memory device.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research