Open AccessThe Investigation of β-Ga2O3 Schottky Diode with Floating Field Ring Termination and the Interface States
Author(s) -
Zhuangzhuang Hu,
Chengwei Zhao,
Qian Feng,
Zhaoqing Feng,
Zhitai Jia,
Xiaozheng Lian,
Zhanping Li,
Chunfu Zhang,
Hong Zhou,
Jincheng Zhang,
Yue Hao
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ab6162
Subject(s) - materials science , schottky diode , schottky barrier , diode , conduction band , enhanced data rates for gsm evolution , ring (chemistry) , atomic physics , electric field , electron , analytical chemistry (journal) , optoelectronics , physics , telecommunications , chemistry , organic chemistry , chromatography , quantum mechanics , computer science
In this paper, we fabricated the vertical β -Ga 2 O 3 Schottky barrier diodes with floating metal ring (FMR) edge termination structure. As the distance between the major Schottky junction and the FMR increasing, the breakdown voltage increases to 143, 161, 188 and 172 V, respectively, about 20.17%, 35.29%, 57.98% and 44.54% improvement in comparison with that without FMR. Under constant current stress, the variation of applied voltage indicates that the barrier height increases by the electron capture at the interface states while the barrier height decreases by the electron release. Furthermore, based on the excellent fitting of G p / ω measurement data, the extracted trap levels are within the range of 0.87–0.90 eV below the conduction band edge and the corresponding trap density increases from 1.24 × 10 12 cm −2 · eV −1 to 1.71 × 10 13 cm −2 · eV −1 , which is in good agreement with previously reported theoretical and experimental results.