Open AccessGaN Power Devices – Current Status and Future Directions
Author(s) -
Travis J. Anderson,
Srabanti Chowdhury,
Özgür Aktaş,
Michał Boćkowski,
Jennifer K. Hite
Publication year - 2018
Publication title -
the electrochemical society interface
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.568
H-Index - 46
eISSN - 1944-8783
pISSN - 1064-8208
DOI - 10.1149/2.f04184if
Subject(s) - high electron mobility transistor , power semiconductor device , materials science , optoelectronics , transistor , engineering physics , amplifier , limiting , electrical engineering , substrate (aquarium) , gallium nitride , wide bandgap semiconductor , power (physics) , epitaxy , semiconductor device , voltage , nanotechnology , cmos , engineering , physics , mechanical engineering , oceanography , layer (electronics) , quantum mechanics , geology
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