Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad | Zendy

JongHo Kim | Zendy; Yong Won Lee | Zendy; Hyeong-Seop Im | Zendy; Chan-Hyoung Oh | Zendy; Jong-In Shim | Zendy; Daesung Kang | Zendy; TaeYeon Seong | Zendy; Hiroshi Amano | Zendy

Open Access

Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Author(s) -

JongHo Kim,

Yong Won Lee,

Hyeong-Seop Im,

Chan-Hyoung Oh,

Jong-In Shim,

Daesung Kang,

TaeYeon Seong,

Hiroshi Amano

Publication year - 2019

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.0462001jss

Subject(s) - materials science , light emitting diode , electrode , optoelectronics , diode , voltage , blue light , layer (electronics) , composite material , electrical engineering , chemistry , engineering

To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n -electrode, expanded stripe-type p -electrode, and reflective p -bonding pad were employed. Flip-chip (FC) LEDs with the expanded p -electrode gave forward voltages of 2.99–3.11 V at 100 mA and series resistances of 3.28–3.94 Ω. The expanded p -electrode FCLED fabricated with 375 nm-thick window and TiO 2 adhesion layers produced 22.7% higher light output at 21 A/cm 2 than conventional FCLEDs. The expanded p -electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO 2 adhesion layers.

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