Open AccessAl0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature
Author(s) -
Albert G. Baca,
Brianna Klein,
Andrew A. Allerman,
Andrew Armstrong,
E Douglas,
Chad A. Stephenson,
Torben R. Fortune,
Robert Kaplar
Publication year - 2017
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0231712jss
Subject(s) - materials science , optoelectronics , ohmic contact , transistor , schottky diode , diode , threshold voltage , atmospheric temperature range , electron mobility , schottky barrier , leakage (economics) , voltage , electrical engineering , nanotechnology , physics , engineering , layer (electronics) , meteorology , economics , macroeconomics
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