Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors | Zendy

Brianna Klein | Zendy; Albert G. Baca | Zendy; Andrew Armstrong | Zendy; Andrew A. Allerman | Zendy; Carlos Anthony Sanchez | Zendy; E Douglas | Zendy; Mary H. Crawford | Zendy; Mary Ann Miller | Zendy; Paul G. Kotula | Zendy; Torben R. Fortune | Zendy; Vincent M. Abate | Zendy

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Planar Ohmic Contacts to Al_0.45Ga_0.55N/Al_0.3Ga_0.7N High Electron Mobility Transistors

Author(s) -

Brianna Klein,

Albert G. Baca,

Andrew Armstrong,

Andrew A. Allerman,

Carlos Anthony Sanchez,

E Douglas,

Mary H. Crawford,

Mary Ann Miller,

Paul G. Kotula,

Torben R. Fortune,

Vincent M. Abate

Publication year - 2017

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.0181711jss

Subject(s) - ohmic contact , materials science , contact resistance , annealing (glass) , transistor , electron mobility , schottky diode , schottky barrier , optoelectronics , transmission electron microscopy , planar , sheet resistance , analytical chemistry (journal) , metallurgy , nanotechnology , diode , layer (electronics) , electrical engineering , chemistry , computer graphics (images) , engineering , voltage , chromatography , computer science

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