Open AccessAlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers
Author(s) -
F. Ren,
S. J. Pearton,
Shihyun Ahn,
Yi-Hsuan Lin,
Francisco Machuca,
Robert E. Weiss,
Alex Welsh,
Martha R. McCartney,
David J. Smith,
Ivan I. Kravchenko
Publication year - 2017
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0161711jss
Subject(s) - materials science , high electron mobility transistor , optoelectronics , buffer (optical fiber) , alloy , layer (electronics) , transmission electron microscopy , epitaxy , transistor , full width at half maximum , composite material , nanotechnology , electrical engineering , engineering , voltage
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