Open AccessReview—Ultra-Wide-Bandgap AlGaN Power Electronic Devices
Author(s) -
Robert Kaplar,
Andrew A. Allerman,
Andrew Armstrong,
Mary H. Crawford,
Jeramy Ray Dickerson,
A. J. Fischer,
Albert G. Baca,
E Douglas
Publication year - 2016
Publication title -
ecs journal of solid state science and technology
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0111702jss
Subject(s) - materials science , gallium nitride , engineering physics , optoelectronics , wide bandgap semiconductor , semiconductor , electronics , nitride , power semiconductor device , band gap , power electronics , nanotechnology , epitaxy , power (physics) , electrical engineering , engineering , physics , layer (electronics) , quantum mechanics
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