Open AccessReview—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications
Author(s) -
H. X. Jiang,
J. Y. Lin
Publication year - 2016
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0031702jss
Subject(s) - materials science , optoelectronics , photoluminescence , heterojunction , exciton , impurity , absorption (acoustics) , epitaxy , vacancy defect , absorption edge , band gap , nanotechnology , condensed matter physics , layer (electronics) , chemistry , physics , organic chemistry , composite material
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom